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| to-92mod plastic-encapsulate transistors 2SA966 transistor (pnp) feature complementary to 2sc2236 and 3 watts output applications. maximum ratings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -1.5 a pc collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v(br) cbo i c = -1ma , i e =0 -30 v collector-emitter breakdown voltage v(br) ceo i c = -10ma ,i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -30v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-2v, i c = -500ma 100 320 collector-emitter saturation voltage v ce(sat) i c = -1.5 a, i b = -0.03a -2 v base-emitter voltage v be i c = -500ma,v ce =-2v -1 v transition frequency f t v ce = -2v, i c =-500ma 120 mhz collector output capacitance c ob v cb =-10v, i e =0, f= 1 mhz 30 pf classification of h fe rank o y range 100-200 160-320 to-92mod 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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